The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
May. 12, 2014
Applicant:
K. Eklund Innovation, Uppsala, SE;
Inventor:
Klas-Hakan Eklund, Uppsala, SE;
Assignee:
K.EKLUND INNOVATION, Uppsala, SE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/739 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 23/535 (2013.01); H01L 27/0623 (2013.01); H01L 29/0649 (2013.01); H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/0847 (2013.01); H01L 29/1008 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 2924/0002 (2013.01);
Abstract
The present invention provides a lateral IGBT transistor comprising a bipolar transistor and an IGFET. The lateral IGBT comprises a low resistive connection between the drain of the IGFET and the base of the bipolar transistor, and an isolating layer arranged between the IGFET and the bipolar transistor. The novel structure provides a device which is immune to latch and gives high gain and reliability. The structure can be realized with standard CMOS technology available at foundries.