The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jul. 06, 2015
Fuji Electric Co., Ltd., Kawasaki, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device is provided with a first well region of a first conduction type having a first voltage (voltage VB) applied thereto, a second well region of a second conduction type formed in the surface layer section of the first well region and having a second voltage (voltage VS) different from the first voltage applied thereto, and a charge extracting region of the first conduction type formed in the surface layer section of the second well region and having the first voltage applied thereto. This inhibits the operation of a parasitic bipolar transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile