The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jun. 25, 2015
Applicant:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Inventor:
Andrei Konstantinov, Sollentuna, SE;
Assignee:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/87 (2006.01); H01L 21/30 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 21/02529 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 29/0692 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/872 (2013.01);
Abstract
In one general aspect, a power rectifier device can include a drift layer including silicon carbide of n-type conductivity, and a Schottky electrode disposed on the drift layer where the Schottky electrode and a surface of the drift layer can provide a Schottky contact. The power rectifier device can also include an array of p-type regions disposed underneath the Schottky electrode.