The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Sep. 28, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Nam Kyun Park, Gyeonggi-do, KR;
Kang Sik Choi, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 27/10 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2454 (2013.01); H01L 27/101 (2013.01); H01L 27/228 (2013.01); H01L 27/2481 (2013.01); H01L 45/1253 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1683 (2013.01);
Abstract
A semiconductor memory device comprising a bit line extending in a first direction, a vertical gate cell including a gate oxide layer and a gate metal layer that are formed in a pillar shape, a lower electrode and a data storage material layer formed on the vertical gate cell, and an interconnection layer formed on the data storage material layer.