The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Mar. 16, 2015
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Ying Zhang, Beijing, CN;

Xin Li, Beijing, CN;

Hong Zhu, Beijing, CN;

Hongjun Yu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 27/12 (2013.01); H01L 29/06 (2013.01); H01L 29/458 (2013.01); H01L 29/786 (2013.01); H01L 29/78663 (2013.01);
Abstract

The present invention discloses a thin-film transistor and a fabricating method thereof, an array substrate and a display apparatus. An active layer in the thin-film transistor comprises a first active layer and a second active layer which are stacked; wherein, an orthographic projection of the first active layer on the substrate covers orthographic projections of the source electrode, the drain electrode as well as a gap located between the source electrode and the drain electrode on the substrate, and covers an orthographic projection of the gate electrode on the substrate; the second active layer is located at the gap between the source electrode and the drain electrode, and an orthographic projection of the second active layer on the substrate is located in a region where the orthographic projection of the gate electrode on the substrate is located.


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