The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Aug. 15, 2014
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Sumio Katoh, Osaka, JP;
Naoki Ueda, Osaka, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
Abstract
A semiconductor device includes a memory transistor (A) which is capable of being irreversibly changed from a semiconductor state where drain current Ids depends on gate voltage Vg to a resistor state where drain current Ids does not depend on gate voltage Vg. The memory transistor (A) includes a gate electrode (), a metal oxide layer (), a gate insulating film (), and source and drain electrodes. The drain electrode (d) has a multilayer structure which includes a first drain metal layer (d) and a second drain metal layer (d), the first drain metal layer (d) being made of a first metal whose melting point is not less than 1200° C., the second drain metal layer (d) being made of a second metal whose melting point is lower than that of the first metal. Part P of the drain electroded extends over both the metal oxide layer () and the gate electrode () when viewed in a direction normal to a surface of the substrate. The part (P) of the drain electrode (d) includes the first drain metal layer (d) and does not include the second drain metal layer (d).