The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Nov. 10, 2010
Applicants:

Van Mieczkowski, Apex, NC (US);

Zoltan Ring, Chapel Hill, NC (US);

Jason Gurganus, Raleigh, NC (US);

Helmut Hagleitner, Zebulon, NC (US);

Inventors:

Van Mieczkowski, Apex, NC (US);

Zoltan Ring, Chapel Hill, NC (US);

Jason Gurganus, Raleigh, NC (US);

Helmut Hagleitner, Zebulon, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/329 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01059 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1306 (2013.01);
Abstract

The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process.


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