The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Feb. 25, 2016
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Hideki Kanai, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/467 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76838 (2013.01); H01L 21/02356 (2013.01); H01L 21/3086 (2013.01); H01L 21/467 (2013.01); H01L 21/76802 (2013.01); H01L 21/76892 (2013.01);
Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a convex portion including an interconnect and a first film above a substrate, forming a second film on the convex portion, and forming a concave portion having a first bottom face of the first film and a second bottom face lower than the upper face of the first film in the second film. The method further includes forming a polymer film in the concave portion by using a polymer that includes first and second portions respectively having first and second affinities for the first film, phase-separating the first and second portions to form a first pattern containing the first portion and located on the first bottom face and a second pattern containing the second portion and located on the second bottom face in the polymer film, and selectively removing the first or second pattern.


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