The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jan. 30, 2014
Applicants:
Excico France, Gennevilliers, FR;
University College Cork—national University of Ireland, Cork, Cork, IE;
Inventors:
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/324 (2006.01); H01L 21/268 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3247 (2013.01); H01L 21/268 (2013.01); H01L 21/2855 (2013.01); H01L 21/28512 (2013.01); H01L 21/28568 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/45 (2013.01); H01L 29/78 (2013.01);
Abstract
The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device () by providing a first layer () of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (A) having a substantially planar interface with the underlying first (Ge) layer.