The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Dec. 18, 2015
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Brian E. Goodlin, Plano, TX (US);

Karen H. R. Kirmse, Richardson, TX (US);

Iqbal R. Saraf, Wappingers Falls, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/326 (2006.01); H01L 31/00 (2006.01); H01L 21/3065 (2006.01); H01L 49/02 (2006.01); H01L 37/00 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/31058 (2013.01); H01L 28/10 (2013.01); H01L 29/0657 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 37/00 (2013.01);
Abstract

A cavity is formed in a semiconductor substrate wherein the width of the cavity is greater than the depth of the cavity and wherein the depth of the cavity is non uniform across the width of the cavity. The cavity may be formed under an electronic device in the semiconductor substrate. The cavity is formed in the substrate by performing a first cavity etch followed by repeated cycles of polymer deposition, cavity etch, and polymer removal.


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Goodlin, Brian. (2017). Enhanced lateral cavity etch (U.S. Patent No. 9607847). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9607847

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