The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Nov. 13, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Zheyun Feng, Shanghai, CN;
Ming Wang, Shanghai, CN;
Qiancheng Ma, Shanghai, CN;
Huifang Song, Shanghai, CN;
Yong Cheng, Shanghai, CN;
Abstract
An N-type Lateral Diffused Metal-Oxide-Semiconductor (NLDMOS) transistor is provided. The NLDMOS transistor comprises a P-type substrate; and a semiconductor layer having a deep N-type well region formed on the P-type substrate. Further, the NLDMOS transistor also includes at least a P-type body region and an N-type drift region formed in the deep N-type well region; and an N-type heavily doped drain region formed in the N-type drift region. Further, the NLDMOS transistor includes a P-type doped reverse type region formed below the N-type drift region in the deep N-type well region, being physically connected with the first P-type body region, and preventing carriers from escaping between the N-type source region and external devices.