The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Dec. 03, 2015
Applicant:
Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;
Inventor:
Kazufumi Tanaka, Akishima, JP;
Assignee:
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 33/08 (2010.01); H01L 33/62 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02172 (2013.01); H01L 21/02266 (2013.01); H01L 21/3105 (2013.01); H01L 33/08 (2013.01); H01L 33/62 (2013.01); H01L 33/20 (2013.01);
Abstract
A semiconductor device includes a support substrate, an insulating layer provided on the support substrate, and a semiconductor element provided on the insulating layer. The insulating layer has a lower insulating layer consisting of amorphous boron nitride, and an upper insulating layer provided on the lower insulating layer and including amorphous boron nitride and an hexagonal system boron nitride (h-BN) particles.
Tanaka, Kazufumi. (2017). Semiconductor device including h-bn insulating layer and its manufacturing method (U.S. Patent No. 9607824). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9607824
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile