The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Oct. 31, 2012
Applicant:
Medtronic, Inc., Minneapolis, MN (US);
Inventors:
Kevin K. Walsh, Peoria, AZ (US);
Paul B. Patterson, Gilbert, AZ (US);
Glen W. Benton, Chandler, AZ (US);
Jeffrey D. Wilkinson, Vadnais Heights, MN (US);
Assignee:
Medtronic, Inc., Minneapolis, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 7/22 (2006.01); G11C 16/26 (2006.01); G11C 16/28 (2006.01); G11C 7/14 (2006.01); G11C 11/00 (2006.01); G11C 17/12 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 7/065 (2013.01); G11C 7/08 (2013.01); G11C 7/227 (2013.01); G11C 16/26 (2013.01); G11C 16/28 (2013.01); G11C 7/14 (2013.01); G11C 11/005 (2013.01); G11C 17/12 (2013.01); G11C 29/50 (2013.01); G11C 29/50004 (2013.01);
Abstract
Electrically erasable flash memory and method. The memory has a data storage element and a voltage sensing circuit. The data storage element is configured to store data bits, each of the data bits having a data state. The voltage sensing circuit is selectively coupled to individual ones of data bits and is configured to bias the data bits with at least one of a bias current and a bias resistance and to read the data state of the individual ones of the plurality of data bits.