The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Aug. 19, 2015
Infineon Technologies Ag, Neubiberg, DE;
Juergen Zimmer, Neubiberg, DE;
Klemens Pruegl, Regensburg, DE;
Olaf Kuehn, Dresden, DE;
Andreas Strasser, Regensburg, DE;
Ralf-Rainer Schledz, St. Margarethen, AT;
Norbert Thyssen, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.