The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Jun. 17, 2014
Applicant:

University of Central Florida Research Foundation, Inc., Orlando, FL (US);

Inventors:

Aravinda Kar, Oviedo, FL (US);

Tariq Manzur, Newport, RI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/026 (2006.01); B82Y 20/00 (2011.01); G01J 1/42 (2006.01); H01L 21/223 (2006.01); H01L 21/268 (2006.01); H01L 27/146 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0264 (2013.01); B82Y 20/00 (2013.01); G01J 1/42 (2013.01); H01L 21/223 (2013.01); H01L 21/2233 (2013.01); H01L 21/268 (2013.01); H01L 27/14643 (2013.01); H01S 5/0028 (2013.01); H01S 5/183 (2013.01); H01S 5/0262 (2013.01); H01S 5/34306 (2013.01); H01S 5/426 (2013.01);
Abstract

A method of optical signal amplification. Incident photons are received at a photodetector including a doped semiconductor biased by a power source. The photons generate a change in a reflective property, refractive index, or electrical conductivity of the doped semiconductor. For the change in reflective property or refractive index, a first optical signal is reflected off the photodetector to provide a reflected beam, or the photodetector includes a reverse biased semiconductor junction including the doped semiconductor within a laser resonator including a laser medium, wherein a second optical signal is emitted. For the change in electrical conductivity the photodetector includes a reversed biased semiconductor junction that is within an electrical circuit along with an electrically driven light emitting device, where a drive current provided to the light emitting device increases as the electrical conductivity of the photodetector decreases, and the light emitting device emits a third optical signal.


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