The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Dec. 31, 2015
Applicant:

Thorlabs Quantum Electronics, Inc., Jessup, MD (US);

Inventors:

Catherine Genevieve Caneau, Corning, NY (US);

Feng Xie, Painted Post, NY (US);

Chung-En Zah, Holmdel, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H01S 5/34 (2006.01); H01S 5/02 (2006.01); H01S 5/20 (2006.01); H01S 5/0625 (2006.01);
U.S. Cl.
CPC ...
H01S 5/026 (2013.01); H01S 5/0208 (2013.01); H01S 5/06256 (2013.01); H01S 5/2031 (2013.01); H01S 5/3402 (2013.01);
Abstract

Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index Nof the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.


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