The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Oct. 17, 2014
Applicant:

Bae Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);

Inventors:

Idan Mandelbaum, Fair Lawn, NJ (US);

Konstantinos Papadopoulos, Chevy Chase, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/10 (2006.01); H01S 3/094 (2006.01); H01S 5/06 (2006.01); H01S 3/106 (2006.01); H01S 5/0625 (2006.01); H01S 5/125 (2006.01); H01S 5/34 (2006.01); H01S 5/02 (2006.01); H01S 5/12 (2006.01);
U.S. Cl.
CPC ...
H01S 3/094076 (2013.01); H01S 3/094092 (2013.01); H01S 3/1062 (2013.01); H01S 5/0608 (2013.01); H01S 5/06256 (2013.01); H01S 5/125 (2013.01); H01S 5/34 (2013.01); H01S 5/021 (2013.01); H01S 5/0609 (2013.01); H01S 5/12 (2013.01);
Abstract

A laser system includes first and second mirrors, a semiconductor laser and a high frequency pulse generator. The semiconductor laser generates optical power within an optical cavity and reflects the optical power between the first mirror and second mirrors. The optical power has a frequency of f. The high frequency pulse generator generates a high frequency pulse with a rise time greater than an optical cycle of the optical power within the optical cavity and directly impinges the high frequency pulse on the optical power within the optical cavity. Impinging the high frequency pulse on the optical power within the optical cavity causes a frequency shift of the optical power to generate a final laser frequency that is greater than fas well as beyond a frequency band of the second mirror to cause a final laser to be emitted past the second mirror and from the semiconductor laser.


Find Patent Forward Citations

Loading…