The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Feb. 20, 2014
Applicant:

Canon Anelva Corporation, Kawasaki-shi, JP;

Inventor:

Masayoshi Ikeda, Kawasaki, JP;

Assignee:

Canon Anelva Corporation, Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01J 37/32357 (2013.01);
Abstract

In a case where reactive ion etching using a gas containing an oxygen atom is used for etching or a magnetoresistive element, a magnetic film becomes damaged due to oxidation. Such damage to the element by the oxidation becomes a factor which causes deterioration in element properties. In the etching of the magnetoresistive element according to one embodiment of the present invention, a magnetoresistive film is subjected to ion beam etching and thereafter to reactive ion etching. A side deposition formed by the ion beam etching coats a sidewall of the magnetoresistive film and reduces damage by the oxygen atom during the later reactive ion etching. Also, a time during which the element is exposed to plasma of the gas containing the oxygen atom can be reduced.


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