The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Dec. 26, 2013
Applicant:

Enraytek Optoelectronics Co., Ltd., Shanghai, CN;

Inventor:

Leke Wu, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01); H01L 33/64 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/64 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0075 (2013.01);
Abstract

A method of fabricating a flip-chip photonic-crystal light-emitting diode (LED) is disclosed. The method includes the steps of: providing an initial substrate including an epitaxial-growth surface and a light-output surface; performing a nanoimprint process on the epitaxial-growth surface of the initial substrate to form a nano-level patterned substrate; forming a flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate; and performing a nanoimprint process on the light-output surface of the nano-level patterned substrate to form the flip-chip photonic-crystal LED. The formation of the photonic-crystal structure on the light-output surface results in enhanced LED light extraction and emission efficiency.


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