The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jun. 15, 2015
Applicant:
Silego Technology, Inc., Santa Clara, CA (US);
Inventor:
John Othniel McDonald, Mountain House, CA (US);
Assignee:
Silego Technology, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/08 (2010.01); H01L 33/52 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); H01L 33/007 (2013.01); H01L 33/0008 (2013.01); H01L 33/08 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/504 (2013.01); H01L 33/52 (2013.01); H01L 33/62 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A low cost, high efficiency light-emitting diode design is disclosed. In some embodiments, a p-n junction of a light-emitting diode is formed in an epitaxial layer grown on a substrate. Grinding the backside of an associated wafer after encapsulation not only opens a light path for the light emitting diode but removes most residual defects.