The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
May. 26, 2016
Applicants:
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
The University of Tokyo, Bunkyo-ku, Tokyo, JP;
Inventors:
Assignees:
Sharp Kabushiki Kaisha, Sakai, JP;
THE UNIVERSITY OF TOKYO, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0352 (2006.01); H01L 31/072 (2012.01); H01L 31/055 (2014.01); H01L 31/0232 (2014.01); H01L 31/109 (2006.01); H01L 31/054 (2014.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/02322 (2013.01); H01L 31/02327 (2013.01); H01L 31/055 (2013.01); H01L 31/0547 (2014.12); H01L 31/072 (2013.01); H01L 31/109 (2013.01);
Abstract
A photoelectric conversion element includes a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers (quantum dot sub-layers) alternately stacked and also includes a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light. The wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band.