The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Aug. 07, 2015
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Chia-Hao Tsai, Miao-Li County, TW;

Chih-Lung Lin, Miao-Li County, TW;

Assignee:

INNOLUX CORPORATION, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4175 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01);
Abstract

An embodiment of the invention provides a thin-film transistor substrate, including: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate electrode; an active layer disposed on the gate insulating layer and above the gate electrode, wherein the active layer includes a metal oxide; a source electrode disposed on and electrically connecting to the active layer; a first insulating layer covering the source electrode; and a drain electrode disposed on and electrically connecting to the active layer, wherein the drain electrode includes a metal oxide layer.


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