The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Apr. 08, 2015
Jtekt Corporation, Osaka-shi, Osaka, JP;
Yasuhide Takeda, Nissin, JP;
Yasuyuki Wakita, Kashihara, JP;
JTEKT CORPORATION, Osaka, JP;
Abstract
A gate pad is disposed on a semiconductor layer composed of an ntype substrate, an ntype epitaxial layer, and a ptype body layer. The gate pad is disposed at the center portion of the semiconductor layer as viewed in plan. A plurality of unit cells that compose a trench type MOSFET element are provided in the semiconductor layer. The plurality of unit cells are arranged in the radial direction about the gate pad as viewed in plan. A gate electrode of a unit cell (center-side unit cell) that is proximate to the gate pad is electrically connected to the gate pad. Gate electrodes of unit cells that are adjacent to each other in the radial direction are connected to each other.