The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Apr. 08, 2015
Applicant:
Jtekt Corporation, Osaka-shi, Osaka, JP;
Inventors:
Yasuhide Takeda, Nissin, JP;
Yasuyuki Wakita, Kashihara, JP;
Masaya Segawa, Nara, JP;
Shigeki Nagase, Nabari, JP;
Assignee:
JTEKT CORPORATION, Osako, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/49 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/42372 (2013.01); H01L 29/66704 (2013.01); H01L 29/66734 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/10156 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A gate pad and a source pad are disposed on a semiconductor layer. The gate pad is disposed at the center portion of the semiconductor layer and has the shape of a circle centered on the center of the semiconductor layer as viewed in plan. The source pad is disposed so as to surround the gate pad, and has the shape of a circular ring centered on the center of the semiconductor layer as viewed in plan. A plurality of unit cells that compose a trench type MOSFET element are formed in the semiconductor layer.