The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Mar. 09, 2015
Applicant:

Michael Marrs, Phoenix, AZ (US);

Inventor:

Michael Marrs, Phoenix, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 31/105 (2006.01); H01L 31/0288 (2006.01); H01L 31/0224 (2006.01); H01L 29/66 (2006.01); H01L 31/18 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02573 (2013.01); H01L 27/14661 (2013.01); H01L 27/14663 (2013.01); H01L 27/14692 (2013.01); H01L 29/22 (2013.01); H01L 29/24 (2013.01); H01L 29/42356 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78696 (2013.01); H01L 31/0288 (2013.01); H01L 31/022475 (2013.01); H01L 31/105 (2013.01); H01L 31/1808 (2013.01); Y02P 70/521 (2015.11);
Abstract

Some embodiments include a semiconductor device. The semiconductor device includes a transistor having a gate metal layer, a transistor composite active layer, and one or more contact elements over the transistor composite active layer. The transistor composite active layer includes a first active layer and a second active layer, the first active layer is over the gate metal layer, and the second active layer is over the first active layer. Meanwhile, the semiconductor device also includes one or more semiconductor elements forming a diode over the transistor. The semiconductor element(s) have an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Other embodiments of related systems and methods are also disclosed.


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