The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
May. 21, 2015
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Hejing Zhang, Shenzhen, CN;
Chihyuan Tseng, Shenzhen, CN;
Chihyu Su, Shenzhen, CN;
Wenhui Li, Shenzhen, CN;
Longqiang Shi, Shenzhen, CN;
Xiaowen Lv, Shenzhen, CN;
Shimin Ge, Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
The present invention provides a dual gate TFT substrate structure utilizing COA skill, comprising a substrate (), a bottom gate () positioned on the substrate (), a bottom gate isolation layer () covering the bottom gate () and the substrate (), an active layer () positioned on the bottom gate isolation layer () above the bottom gate (), an etching stopper layer () positioned on the active layer () and the bottom gate isolation layer (), a source/a drain () positioned on the etching stopper layer () and respectively contacted with two ends of the active layer (), color filter () positioned on the source/the drain () and the etching stopper layer (), and a top gate () positioned on the color filter () and contacted with the bottom gate (); the active layer () and the thin film of the previous manufacture process can be effectively protected and the original property and the stability of the active layer () and the thin film of the previous manufacture process can be ensured.