The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Sep. 16, 2015
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Yeon Keon Moon, Seoul, KR;

Masataka Kano, Hwaseong-si, KR;

So Young Koo, Yongin-si, KR;

Myoung Hwa Kim, Seoul, KR;

Jun Hyung Lim, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1251 (2013.01); H01L 29/42356 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78648 (2013.01);
Abstract

A thin film transistor display panel including: a first insulating substrate; a first semiconductor disposed between the first insulating substrate and a first gate insulating layer; a gate electrode disposed on the first gate insulating layer, the gate electrode overlapping the first semiconductor; a second gate insulating layer disposed on the gate electrode; a second semiconductor disposed on the second gate insulating layer, the second semiconductor overlapping the gate electrode; an interlayer insulating layer disposed on the second semiconductor; and a source electrode and a drain electrode disposed on the interlayer insulating layer spaced apart from each other, the source electrode and the drain electrode connected to the first semiconductor and the second semiconductor.


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