The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jun. 03, 2014
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Jun Koyama, Kanagawa, JP;
Hideomi Suzawa, Kanagawa, JP;
Koji Ono, Kanagawa, JP;
Tatsuya Arao, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); G02F 1/1345 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1255 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/78621 (2013.01); G02F 1/13454 (2013.01); H01L 2029/7863 (2013.01);
Abstract
A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.