The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Dec. 17, 2013
Applicant:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Inventors:
Sanghoon Lee, Seongnam-si, KR;
Hyunyong Go, Suwon-si, KR;
Sunggil Kim, Yongin-si, KR;
Kyong-Won An, Seoul, KR;
Woosung Lee, Yongin-si, KR;
Yongseok Cho, Yongin-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonngi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/108 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2017.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01); H01L 27/11578 (2013.01); H01L 2924/0002 (2013.01);
Abstract
In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.