The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Jun. 11, 2014
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Toshiyuki Miyanagi, Azumino, JP;

Yuichiro Hinata, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 25/18 (2006.01); H01L 23/34 (2006.01); G01R 31/26 (2014.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/34 (2013.01); G01R 31/2619 (2013.01); G01R 31/2628 (2013.01); H01L 23/3735 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A temperature of a semiconductor element is measured based on a temperature coefficient of a voltage between the first electrode and the second electrode when no heat is generated when causing a constant current of an extent such that the semiconductor element does not generate heat to be input wherein current is caused to flow from a third electrode to a second electrode in accordance with voltage applied between a first electrode and the second electrode. Also, a constant current such that the semiconductor element generates heat is input into the third electrode, with voltage applied between the first electrode and second electrode of the semiconductor element kept constant, and power is measured based on the current such that the semiconductor element generates heat and on voltage when heat is generated between the third electrode and second electrode when the semiconductor element generates heat.


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