The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Nov. 16, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventor:
Murat Kerem Akarvardar, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 29/161 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/02532 (2013.01); H01L 21/02598 (2013.01); H01L 21/02636 (2013.01); H01L 21/308 (2013.01); H01L 21/31051 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/161 (2013.01);
Abstract
A semiconductor structure for a FinFET in fabrication is provided, the structure including a bulk semiconductor substrate initially with a hard mask over the substrate. Isolation trenches between regions of the structure where the fins will be are formed prior to the fins, and filled with selectively removable sacrificial isolation material. Remains of the hard mask are removed and another hard mask formed over the structure with filled isolation trenches. Fins are then formed throughout the structure, including the regions of sacrificial isolation material, which is thereafter selectively removed.