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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9601332 B1

PDFFull Text
Date of Patent:
Mar. 21, 2017

Filed:

Jan. 04, 2016

Systems and method for ohmic contacts in silicon carbide devices

Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Zachary Matthew Stum, Niskayuna, NY (US);

Reza Ghandi, Niskayuna, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:

John P. Darling

Primary Examiner:

Steven Loke

Assistant Examiner:

Juanita Rhodes

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 23/544 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 21/285 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/324 (2006.01); H01L 23/522 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0485 (2013.01); H01L 21/02697 (2013.01); H01L 21/28518 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/31 (2013.01); H01L 21/31111 (2013.01); H01L 21/324 (2013.01); H01L 21/32133 (2013.01); H01L 23/5226 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/66068 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01); H01L 29/7802 (2013.01); H01L 29/7816 (2013.01); H01L 29/808 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film disposed over the gate electrode. The device has a contact region disposed near the gate electrode and has a layer disposed over the dielectric film and over the contact region. The layer includes nickel in portions disposed over the dielectric film and includes nickel silicide in portions disposed over the contact region. The nickel silicide layer is configured to provide an ohmic contact to the contact region of the silicon carbide device.

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