The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Nov. 15, 2012
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
Abstract
This semiconductor device () includes: a thin-film transistor (); an interlevel insulating layer () including a first insulating layer (); a first transparent conductive layer () formed on the interlevel insulating layer and having a first hole (); a dielectric layer () covering the side surface of the first transparent conductive layer closer to the first hole; and a second transparent conductive layer () overlapping at least partially with the first transparent conductive layer via the dielectric layer, which has a second hole (). The first insulating layer has a third hole (). The interlevel insulating layer and dielectric layer have a first contact hole (CH), the sidewall of which includes the side surfaces of the second and third holes (). At least a part of the side surface of the third hole is aligned with that of the second hole. The second transparent conductive layer contacts with the drain electrode in the first contact hole to form a contact portion (), which at least partially overlaps with a gate line layer when viewed along a normal to a substrate.