The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jul. 11, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sun-kwon Kim, Suwon-si, KR;
Do-kyoon Kim, Seongnam-si, KR;
Kee-chang Lee, Yongin-si, KR;
Glenn Mangelinckx, Ghent, BE;
Jeroen Beeckman, Ghent, BE;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Provided are methods of switching guest-host dual frequency liquid crystals by using a back flow. In the case of a shutter having a dual frequency liquid crystal layer between two transparent substrates, such a method includes: applying a first voltage having a first frequency to the dual frequency liquid crystal layer; and applying a second voltage having a second frequency to the dual frequency liquid crystal, the second frequency being higher than the first frequency, wherein the second voltage is higher than a threshold voltage that generates a back flow around liquid crystals of the dual frequency liquid crystal layer, and the first voltage is lower than the threshold voltage.