The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jun. 04, 2015
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B60C 23/04 (2006.01); B60C 23/20 (2006.01); A61B 5/00 (2006.01); B81C 1/00 (2006.01); G01L 1/16 (2006.01); G01L 17/00 (2006.01); H01L 27/20 (2006.01); H01L 41/311 (2013.01); H01L 41/313 (2013.01); H01L 21/02 (2006.01); H01L 21/54 (2006.01); H01L 23/00 (2006.01); H01L 35/34 (2006.01); H01L 41/25 (2013.01); A61B 5/024 (2006.01);
U.S. Cl.
CPC ...
B60C 23/04 (2013.01); A61B 5/681 (2013.01); B60C 23/0408 (2013.01); B60C 23/0411 (2013.01); B60C 23/0413 (2013.01); B60C 23/20 (2013.01); B81C 1/0023 (2013.01); G01L 1/16 (2013.01); G01L 17/00 (2013.01); H01L 21/02118 (2013.01); H01L 21/02175 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/54 (2013.01); H01L 24/93 (2013.01); H01L 27/20 (2013.01); H01L 35/34 (2013.01); H01L 41/25 (2013.01); H01L 41/311 (2013.01); H01L 41/313 (2013.01); A61B 5/02444 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/12044 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/15788 (2013.01); Y10T 29/42 (2015.01);
Abstract
The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.