The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jul. 29, 2015
Applicant:
Cree, Inc., Durham, NC (US);
Inventor:
Bruce C. Schmukler, Morrisville, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 3/193 (2006.01); H03F 1/02 (2006.01); H03F 3/21 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H03F 1/0205 (2013.01); H03F 3/21 (2013.01); H03F 3/45179 (2013.01); H03F 2200/451 (2013.01); H03F 2203/45154 (2013.01);
Abstract
A Radio Frequency (RF) amplifier includes a depletion mode semiconductor device having a gate, a bias device and an inverting circuit. The depletion mode semiconductor device may be a HEMT and/or a MESFET. The bias device is configured to generate a bias voltage. The inverting circuit is configured to generate an inverted bias voltage from the bias voltage, and to apply the inverted bias voltage to the gate. Related circuits and methods are described.