The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Sep. 10, 2015
Applicant:

Hypres Inc., Elmsford, NY (US);

Inventor:

Sergey K. Tolpygo, Putnam Valley, NY (US);

Assignee:

Hypres, Inc., Elmsford, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 39/24 (2006.01); H01L 39/02 (2006.01); H01L 39/12 (2006.01); H01L 39/22 (2006.01); H01L 27/18 (2006.01);
U.S. Cl.
CPC ...
H01L 39/2493 (2013.01); H01L 39/025 (2013.01); H01L 39/12 (2013.01); H01L 39/223 (2013.01); H01L 39/2406 (2013.01); H01L 39/249 (2013.01); H01L 27/18 (2013.01);
Abstract

An improved microfabrication technique for Josephson junctions in superconducting integrated circuits, based on the use of a double-layer lithographic mask for partial anodization of the side-walls and base electrode of the junctions. The top layer of the mask is a resist material, and the bottom layer is a dielectric material chosen so to maximize adhesion between the resist and the underlying superconducting layer, be etch-compatible with the underlying superconducting layer, and be insoluble in the resist and anodization processing chemistries. The superconductor is preferably niobium, under a silicon dioxide layer, with a conventional photoresist or electron-beam resist as the top layer. This combination results in a substantial increase in the fabrication yield of high-density superconducting integrated circuits, increase in junction uniformity and reduction in defect density. A dry etch more compatible with microlithography may be employed.


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