The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Oct. 22, 2015
Nanostructure semiconductor light emitting device having rod and capping layers of differing heights
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hyun Seong Kum, Hwaseong-si, KR;
Dae Myung Chun, Hwaseong-si, KR;
Ji Hye Yeon, Cheongju-si, KR;
Han Kyu Seong, Seoul, KR;
Jin Sub Lee, Suwon-si, KR;
Young Jin Choi, Seoul, KR;
Jae Hyeok Heo, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Abstract
There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.