The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Feb. 01, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Soon Yeol Park, Chungcheongbuk-do, KR;
Sang Hyun Lee, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/93 (2006.01); H01L 29/94 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 27/0629 (2013.01); H01L 27/0676 (2013.01); H01L 29/0607 (2013.01); H01L 29/0684 (2013.01); H01L 29/4916 (2013.01); H01L 29/94 (2013.01); H01L 29/66174 (2013.01);
Abstract
A MOS varactor includes a first N-type junction region and a second N-type junction region spaced apart from each other by a channel region, a gate insulation layer disposed on the channel region, a gate electrode disposed on the gate insulation layer, and an N-type well region including the channel region and surrounding the first and second N-type junction regions. The N-type well region exhibits a maximum impurity concentration in the channel region.