The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Feb. 12, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Naoki Kumagai, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
An ndrift region is disposed on the front surface of an nsemiconductor substrate composed of a wide band gap semiconductor. A p-channel region is selectively disposed on the surface layer of the ndrift region. A high-concentration pbase region is disposed so as to adjoin the lower portion of the p-channel region inside the ndrift region. Inside the high-concentration pbase region, an nhigh-concentration region is selectively disposed at the nsemiconductor substrate side. The nhigh-concentration region has a stripe-shaped planar layout extending to the direction that the high-concentration pbase regions line up. The nhigh-concentration region adjoins a JFET region at one end portion in longitudinal direction of the stripe. Further, the nsemiconductor substrate side of the nhigh-concentration region adjoins the part sandwiched between the high-concentration pbase region and the nsemiconductor substrate in the ndrift region.