The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jul. 27, 2015
Applicant:
City University of Hong Kong, Kowloon, HK;
Inventors:
Assignee:
CITY UNIVERSITY OF HONG KONG, Kowloon, HK;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/64 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 27/06 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H03B 19/14 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/768 (2013.01); H01L 21/823871 (2013.01); H01L 23/645 (2013.01); H01L 27/0617 (2013.01); H01L 28/10 (2013.01); H01L 29/0696 (2013.01); H01L 29/66477 (2013.01); H03B 19/14 (2013.01);
Abstract
Transistors can be used for a variety of electronic-based applications. Therefore, transistor efficiency and performance is of importance. An apparatus is presented herein to increase the locking range of transistors by leveraging cross-coupled injection transistors in conjunction with symmetry injection transistors. The transistor efficiency can also be increase by reducing a parasitic capacitance associated with the components of the transistor.