The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jul. 02, 2015
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Kenichiro Tanaka, Osaka, JP;
Shinichi Kohda, Kyoto, JP;
Masahiro Ishida, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Abstract
A field-effect transistor includes a codoped layer made of AlGaN (0≦x≦1) and formed on a p-type Si substrate, a GaN layer formed on the codoped layer, and an AlGaN layer formed on the GaN layer. The codoped layer contains C and Si as impurity elements. The impurity concentration of C in the codoped layer is equal to or higher than 5×10/cm. The impurity concentration of Si in the codoped layer is lower than the impurity concentration of C. The impurity concentration of C in the GaN layer is equal to or lower than 1×10/cm. The thickness of the GaN layer is equal to or greater than 0.75 μm.