The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jun. 21, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi Aichi-ken, JP;
Yasuhiro Hirabayashi, Nagoya, JP;
Masaru Senoo, Okazaki, JP;
Akitaka Soeno, Toyota, JP;
Satoru Machida, Nagakute, JP;
Yusuke Yamashita, Nagakute, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
A semiconductor device includes a semiconductor layer and a trench gate portion that extends toward a deep portion from a front surface of the semiconductor layer. The semiconductor layer includes an island region surrounded by the trench gate portion. A first side surface of the trench gate portion and a second side surface of the trench gate portion are in contact with the island region. A first conductivity type contact region that includes a first contact region that is in contact with the first side surface and a second contact region that is in contact with the second side surface is provided in the island region. Moreover, a second conductivity type contact region that is in contact with the trench gate portion at a position between the first contact region and the second contact region is provided in the island region.