The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Sep. 07, 2012
Takayuki Hashimoto, Tokyo, JP;
Mutsuhiro Mori, Tokyo, JP;
Masahiro Masunaga, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention provides a switching device () for power conversion in which a first gate electrode (), a p-type channel layer () having an n-type emitter region (), a second gate electrode (), and a p-type floating layer () are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (). An interval a between the two gates () that sandwich the p-type channel layer () is configured to be smaller than an interval b between the two gates () that sandwich the p-type floating layer (). The first gate electrode () and the second gate electrode () are both supplied with drive signals having a time difference in drive timing.