The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Dec. 02, 2015
Applicant:
Joled Inc., Tokyo, JP;
Inventors:
Assignee:
JOLED, INC., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/4763 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/02164 (2013.01); H01L 21/47635 (2013.01); H01L 27/124 (2013.01); H01L 29/7869 (2013.01);
Abstract
A method of fabricating a thin-film transistor substrate including a thin-film semiconductor includes: forming a metal film mainly comprising Cu above a substrate; forming a source electrode and a drain electrode by processing the metal film in a predetermined shape; irradiating the source electrode and the drain electrode with nitrogen plasma; exposing surfaces of a top and an end portion of the source electrode and the drain electrode with silane (SiH) gas; and forming an insulating layer comprising an oxide on the source electrode and the drain electrode.