The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Apr. 23, 2013
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Lei Zhu, Atsugi, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H02M 3/335 (2006.01); H03F 3/193 (2006.01); H03F 1/32 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 29/1075 (2013.01); H01L 29/1079 (2013.01); H01L 29/2003 (2013.01); H01L 29/4232 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7787 (2013.01); H01L 29/7789 (2013.01); H02M 3/335 (2013.01); H02M 3/33507 (2013.01); H03F 1/3241 (2013.01); H03F 3/195 (2013.01); H03F 3/1935 (2013.01); H03F 3/24 (2013.01);
Abstract
A compound semiconductor device includes: a compound semiconductor region having a surface in which a step is formed; a first electrode formed so as to overlie the upper surface of the step, the upper surface being a non-polar face; and a second electrode formed along a side surface of the step so as to be spaced apart from the first electrode in a vertical direction, the side surface being a polar face.