The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jul. 12, 2016
Tamura Corporation, Tokyo, JP;
Masaru Takizawa, Tokyo, JP;
Akito Kuramata, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
Abstract
A semiconductor device, includes an n-type semiconductor layer provided with a first semiconductor layer with a low electron carrier concentration and a second semiconductor layer with a high electron carrier concentration, an electrode that is in Schottky-contact with a surface of the first semiconductor layer, and an ohmic electrode formed on a surface of the second semiconductor layer. The n-type semiconductor layer is formed of a GaO-based single crystal. The first semiconductor layer has an electron carrier concentration Nd based on reverse withstand voltage VRM and electric field-breakdown strength Em of the GaO-based single crystal.