The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Jul. 10, 2015
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Zhiwu Wang, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); G02F 1/1335 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 21/02178 (2013.01); H01L 21/02266 (2013.01); H01L 27/1259 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); G02F 1/133512 (2013.01); G02F 1/133514 (2013.01); G02F 1/136286 (2013.01); G02F 2201/123 (2013.01);
Abstract

The present disclosure relates to an array substrate and the manufacturing method thereof, and a display panel. The array substrate includes a substrate and a plurality of thin film transistors (TFTs). The TFT includes a gate, a gate insulation layer, a trench layer, an etch stop layer (ESL), a source, and a drain. The gate insulation layer is arranged between the gate and the trench layer to insulate the gate from the trench layer, the source. The drain and the ESL are respectively arranged on the trench layer. The ESL is arranged between the source and the drain. The ESL is an aluminum nitride (AlN) film. In this way, the quality of the TFTs may be guaranteed, and the speed of the film formation of the ESL may be enhanced.


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