The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jul. 07, 2016
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventor:
Guangle Zhou, San Jose, CA (US);
Assignee:
SanDisk Technologies LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 27/249 (2013.01); H01L 27/2436 (2013.01);
Abstract
A method is provided that includes forming a first vertical bit line disposed in a first direction above a substrate, forming a first word line disposed in a second direction above the substrate, the second direction perpendicular to the first direction, forming a first memory cell comprising a nonvolatile memory material at an intersection of the first vertical bit line and the first word line, forming a transistor above the substrate, and forming a first bit line select device coupled between the first vertical bit line and the transistor.