The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Nov. 04, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/16 (2006.01); H01L 29/808 (2006.01); H01L 29/10 (2006.01); H01L 23/00 (2006.01); H01L 21/285 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76841 (2013.01); H01L 21/2855 (2013.01); H01L 21/76843 (2013.01); H01L 21/76852 (2013.01); H01L 23/532 (2013.01); H01L 23/564 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 29/1066 (2013.01); H01L 29/1608 (2013.01); H01L 29/8083 (2013.01); H01L 23/53238 (2013.01); H01L 29/2003 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03612 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03914 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05188 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05561 (2013.01); H01L 2224/05566 (2013.01); H01L 2224/05599 (2013.01); H01L 2224/05688 (2013.01); H01L 2224/45099 (2013.01); H01L 2224/85375 (2013.01); H01L 2224/85399 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A semiconductor device includes a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, including amorphous molybdenum nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided.